Doped Organic Transistors
2017-01-01
org.kosen.entty.User@66e27bb3
박영환(yehapark)
분야
화학
개최일
2016.11.23
신청자
박영환(yehapark)
개최장소
URL
행사&학회소개
1. Introduction A
2. Physics of Doping B
2.1. Thermal Activation of Organic Doping B
2.2. Charge Carrier Statistics in Doped Organic
Layers C
2.3. Doping Efficiency E
3. Chemistry of Dopants E
3.1. p-Dopants E
3.1.1. Elemental Species F
3.1.2. Covalent Solids F
3.1.3. Brønsted and Lewis Acids F
3.1.4. Small Molecules F
3.2. n-Dopants G
3.2.1. Elemental Dopants G
3.2.2. Inorganic Salts G
3.2.3. Low Ionization Potential Donors G
3.2.4. Organic Salts G
3.2.5. Hydrides H
3.2.6. Anion Doping H
3.2.7. Dimers I
4. Doping of Polycrystalline Organic Semiconductors
J
4.1. Doping of P3HT J
4.2. Doping of Pentacene K
4.2.1. p-Doping of Pentacene by Iodine K
4.2.2. p-Doping of Pentacene by Molecular
Dopants L
4.2.3. p-Doping of Pentacene by Transition
Metal Oxides M
4.2.4. n-Doping of Pentacene M
4.3. Doping of Fullerene C60 N
4.4. Doping Other Organic Semiconductors with
High Charge Carrier Mobility O
5. Doped Organic Transistors O
5.1. Contact Doping P
5.1.1. Contact Resistance P
5.1.2. Quasi-Ohmic Contacts Realized by Doping
S
5.1.3. Contact Doping for p-Type Transistors S
5.1.4. Contact Doping for n-Type Transistors U
5.2. Channel Doping V
5.2.1. Doped Organic MIS Junctions V
5.2.2. Doped Organic Transistors X
5.2.3. Majority and Minority Charge Carriers in
Doped Transistors AB
6. Outlook and Conclusions AB
2. Physics of Doping B
2.1. Thermal Activation of Organic Doping B
2.2. Charge Carrier Statistics in Doped Organic
Layers C
2.3. Doping Efficiency E
3. Chemistry of Dopants E
3.1. p-Dopants E
3.1.1. Elemental Species F
3.1.2. Covalent Solids F
3.1.3. Brønsted and Lewis Acids F
3.1.4. Small Molecules F
3.2. n-Dopants G
3.2.1. Elemental Dopants G
3.2.2. Inorganic Salts G
3.2.3. Low Ionization Potential Donors G
3.2.4. Organic Salts G
3.2.5. Hydrides H
3.2.6. Anion Doping H
3.2.7. Dimers I
4. Doping of Polycrystalline Organic Semiconductors
J
4.1. Doping of P3HT J
4.2. Doping of Pentacene K
4.2.1. p-Doping of Pentacene by Iodine K
4.2.2. p-Doping of Pentacene by Molecular
Dopants L
4.2.3. p-Doping of Pentacene by Transition
Metal Oxides M
4.2.4. n-Doping of Pentacene M
4.3. Doping of Fullerene C60 N
4.4. Doping Other Organic Semiconductors with
High Charge Carrier Mobility O
5. Doped Organic Transistors O
5.1. Contact Doping P
5.1.1. Contact Resistance P
5.1.2. Quasi-Ohmic Contacts Realized by Doping
S
5.1.3. Contact Doping for p-Type Transistors S
5.1.4. Contact Doping for n-Type Transistors U
5.2. Channel Doping V
5.2.1. Doped Organic MIS Junctions V
5.2.2. Doped Organic Transistors X
5.2.3. Majority and Minority Charge Carriers in
Doped Transistors AB
6. Outlook and Conclusions AB
보고서작성신청
가장 기본단위의 능동형 전자소자인 트랜지스터를 프린팅 기법으로 제작하게 된다면 우리의 생활은 크게 바뀌게 된다. 이에 적용되는 반도체 물질의 전자적 특성을 변화시키는 가장 쉬운 방법은 도핑을 통해 이루어 낼 수 있다. 본 문헌을 통해 최근의 연구업적들을 요약한다.
Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.
Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.