KOSEN 한인과학기술자네트워크

Electronics and Photonics Primary Sponsor: Department of Defense Deadline: 4/11/2001 KEYWORDS INTRODUCTION: In implementing its TMD and NMD program activities, BMDO is continuing its developments of such efforts as the PATRIOT Advanced Capability-3 (PAC-3) missile system which has four major systems components: radar, engagement control station, launching station, and interceptors. The Navy Area Wide system will develop a sea-based capability that builds upon the existing AEGIS/Standard Missile air defense system. This system is based on the AEGIS-class cruisers and destroyers, which provide all elements of missile defense and are particularly suited to protecting forces moving inland from the sea. The Theater High-Altitude Area Defense System (THAAD) system will form the largest umbrella of missile protection in a specific theater, arching over all other missile defense systems. THAAD consists of four major systems components: truck-mounted launchers; interceptors; radar system; and battle management, command, control, communications, and intelligence (BMC3I). These increasingly sophisticated systems will provide the opportunity to destroy short and medium range ballistic missiles and other threats in the atmosphere far enough away that falling debris will not endanger friendly forces. The various BMDO technology and acquisition programs, in support of the TMD and NMD missions, are continually evaluating the latest advanced technology developments from industry as potential replacements for the current state-of-the-art sensor systems, components, sub-components, or piece part specifics. Research or Research and Development efforts selected under this topic shall demonstrate and involve a degree of technical risk where the technical feasibility of the proposed work has not been fully established. DESCRIPTION: The necessary advances in electronics for the many ballistic missile defense applications will require advances in electronics materials. Primary emphasis lies in advancing the capability of integrated circuits, detectors, sensors, large-scale integration, radiation hardness, and all electronic components. Novel quantum-well/superlattice structures that allow the realization of unique elective properties through "band gap engineering" are sought, as are new organic and polymer materials with unique electronic characteristics. In addition, exploitation of the unusual electronic properties of gallium nitride is of considerable interest. Specifically, under high speed switching conditions at >10GHz and/or cryogenic temperatures. Among the many BMDO electronic needs and interest are advances in high frequency transistor structures, solid state lasers, optical detectors, low dielectric constant packaging materials, tailored thermal conductivity, microstructural waveguides, multilayer capacitors, single-electron transistors, metallization methods for repair of conducting paths in polyceramic systems, and sol-gel processing for packaging materials. Also, dense computing capability is sought in all architectural variations, from all optic to hybrid computers. Specific examples of areas to be addressed include, but are not limited to, high speed multiplexing, monolithic optoelectronic transmitters, holographic methods, reconfigurable interconnects, optoelectronic circuits, and any other technology contributing to advances in intra-computer communications, optical logic gates, bistable memories, optical transistors, and power limiters. Non-linear optical materials advancements and new bistable optical device configurations. PHASE I: Demonstrate the likelihood that a new and innovative research and development approach can meet any of the broad needs discussed in this topic for future BMDO systems consideration. PHASE II: Develop applicable and feasible prototype demonstrations and/or proof-of-concept devices for the approach described, and demonstrate a degree of commercial viability. Successful Phase 3/Dual-Use Commercializers (Real-World Examples): Company Y, with a market cap of $693M+, commercialized technology that allowed for the delivery of ultra-pure materials to semiconductor thin film reactors and has graduated from small business status. Company Z, with a market cap of $7M+, manufactures radiation detection devices and was funded for avalanche photodiode arrays under this topic. Company AA, with a market cap of $216M+, has a substantial market share of the atomic layer epitaxy growth method of semiconductor compound materials based on their efforts developed under this topic. Company BB, with a market cap of $273M+, which manufactures flat panel display devices, received some initial funding for their silicon-on-insulator films and organometallic chemical vapor deposition technology developments. Company CC, with a market cap of $178M+, commercialized technology based on degradation resistant laser diodes. Company DD, with a market cap of $30M+, is commercializing technology based on its surge suppression devices and marketed as SurgX. Company EE, with a market cap of $1,776M+, had initial funding for its high bandgap compounds and laser diode products to develop a number of commercial and military products, and has graduated from small business status. Company KK established a multilayer coating technology that can be easily transported to any location for application. Company FF developed a magnetoresistive non-volatile random access memory chip, which is also radiation hardened, and is utilized in a number of space applications for the military and commercial sectors. Company LL, with a market cap of $26M+, was started with their first Phase I from this topic and the products are used in electronics, structural ceramics, composites, cosmetics and skin care, and as industrial catalysts. Company NN, with a market cap of $510M+, is leveraging technology developed under this topic for the efficient production of semiconductors from waste recovery during the manufacturing process. Company R took a unique technology approach in addressing fiber-optic and other optical communications applications to both the military and commercial industry. Company S is providing a low-loss electro-optical switching array, Company T is providing optical bus extenders and fiber-optic modulators, Company U has funded technology which utilized wavelength division multiplexing techniques; all three support the ever growing optical communication industry. DoD Key Technology Areas: #1 --- Air Platforms #3 --- Information Systems Technology #5 --- Materials/Processes #7 --- Sensors #8 --- Electronics #9 --- Battlespace Environment #10 -- Space Platforms #12 – Weapons #13 -- Nuclear Technology DoD Notice: Between January 2 and February 28, 2001, you may talk directly with the DoD scientists and engineers who authored the solicitation topics, to ask technical questions about the topics. direct communication between proposers and topic authors is not allowed after February 28, 2001, when DoD begins accepting proposals under this solicitation. --> After February 28, 2001 proposers may still submit written questions about solicitation topics through the SBIR/STTR Interactive Topic Information System (SITIS). If you have general questions about DoD SBIR program, please contact the DoD SBIR Help Desk at (800) 382-4634 or email to SBIRHELP@teltech.com. NOTE: The Solicitations listed on this site are copies from the various SBIR agency solicitations and are not necessarily the latest and most up-to-date. For this reason, you should use the agency link listed below which will take you directly to the appropriate agency server where you can read the official version of this solicitation and download the appropriate forms and rules. The official link for this solicitation is: http://www.acq.osd.mil/sadbu/sbir/sttr01/dod_sttr01.htm. DoD will begin accepting proposals on March 1, 2001. The solicitation closing date is April 11, 2001.