U.S.-Europe Conference on wide Bandgap Semiconductor Technology for Next generation Electronic and Photonic Devices : Viewgraphs
2000-04-19
org.kosen.entty.User@6fb547cc
김재남(ostin3)
분야
전기/전자
발행일
1999/12/09
첨부파일
this is the publication of U.S.-Europe Conference on wide Bandgap Semiconductor Technology for Next generation Electronic and Photonic Devices.
its contents are :
-SiC growth and processing technology
-Progress and issues in SiC technology
-High voltage SiC power switching devices
-Application and operaton of high voltage, high current Si-IGBT/SiC diode modules
-GaN-based materials research in europe
-Application of pressure grown GaN substrates to epitaxy
-GaN-based electronic device research in Europe
-Wide bandgap microwave power devices
-High temperature electronics packaging in Europe
-Ohmic contact, packaging for high power and high temperature SiC devices
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