KOSEN 한인과학기술자네트워크

Polyimide는 여러가지가 있지만 말씀하시는 용도에는 다음과 같은 것들이 유용할 것 같습니다. 1. Photodefinable polyimide UV lithography를 통해 직접 패턴화가 가능한 ployimide로 Hitachi와 Dupont이 함께 설립한 HD Microsystems의 HD 4000이나 HD 8000 series를 사용하시는 것이 무난하리라고 생각됩니다. (HD webaite >> http://www.hdmicrosystems.com/2produts/prodlist.html) 2. Dry/wet etchable polyimide UV lithography를 통해 직접 패턴하지 않고 필름을 완전히 cure한 후에 금속재료의 hard mask를 사용하여 dry/wet etch할 수 도 있습니다. 역시 위의 웹사이트를 참고하시기 바랍니다. 3. Other polymers 응용상의 이유로 반드시 polyimide를 써야한다면 할 수 없지만 만약 다른 종류의 polymer를 사용해도 된다면 SU-8이라는 negative tone epoxy resin (http://www.microchem.com/su8.cfm)을 사용할수 도 있습니다. 물론 photodefinable하며 장점은 매우 두꺼운 필름을 만들수 있다는 것인데 한번 스핀 코팅으로 약 ~ 200 um까지 가능합니다. 또 다른 종류로는 저 유전율 필름으로 각광을 받는 Dow의 BCB (benzocyclobutene)를 들 수 있는데 역시 photo BCB가 판매되고 있습니다. Louisiana State University 이정봉 > >polyimide를 glass위에 strip 형태로 제작된 200마이크로 크기의 electrode들 사이에 절연체 및 격벽으로 사용하려고 하는데 >이에 적당한 polyimide를 알고 싶습니다. >포토 리소그라피 작업이나 기타 방법으로 수십 마이크로 단위의 >너비을 가질 수 있도록 형성하여야 합니다.

>>polyimide를 glass위에 strip 형태로 제작된 200마이크로 크기의 electrode들 사이에 절연체 및 격벽으로 사용하려고 하는데 >>이에 적당한 polyimide를 알고 싶습니다. >>포토 리소그라피 작업이나 기타 방법으로 수십 마이크로 단위의 >>너비을 가질 수 있도록 형성하여야 합니다. ------------------------------------------------------------- These papers are related to your request... 1. Review of a photodefinable polyimide process for manufacturing multichip modules Kotzias, Barbara D. (AT&T Microelectronics) Murray, Daniel O. III Source: International Journal of Microcircuits and Electronic Packaging v 16 n 4 4th Qtr 1993 Publ by Int Soc for Hybrid Microelectronics p 339-343 1063-1674 Abstract: When evaluating polyimides for use in a MCM-D application, the ease of processing was thought to be the key to success. Cost pressures are severe for the silicon-on-silicon MCM technology, and photodefinable polyimide offers ease of use and reductions in cost through higher yields and fewer processing steps. Pyralin PI2734 photodefinable polyimide was designed to meet important parameters such as low stress, matched CTE, excellent thermal/chemical properties, low dielectric constant, and low moisture absorption. For lithographic parameters, key needs are: resolution, aspect ratio, desired wall slope, and easy-to-use process. This paper reviews in greater depth the optimization of production processes involved in building polyimide dielectric layers with PI-2734 for a multichip module used in a telecommunications application. These studies have led to a repeatable, manufacturable, low-cost solution to the construction of polyimide layers using MCM-D technology. In English 3. EI94051288531 2. Application of a photodefinable polyimide process for manufacturing multi-chip modules Kotzias, Barbara D (AT&T Microelectronics) Source: Proceedings of SPIE - The International Society for Optical Engineering v 1986 Apr 14-16 1993 1993 Sponsored by: The International Electronics Packaging Society (ISHM); IEEE; The Institute for Interconnecting and Packaging Electronic Circuits (IPS) Publ by Society of Photo-Optical Instrumentation Engineers p 46-50 0277-786X Abstract: Photodefinable polyimides have been developed specifically for use in multichip module applications where the attribute of photodefinability offers ease of use and reductions in cost through higher yields and fewer processing steps. Pyralin PI2734 photodefinable polyimide was designed to meet important parameters such as low stress, matched CTE, excellent thermallchemical properties, low dielectric constant and low moisture absorption. For lithographic parameters, key needs are; required resolution, aspect ratio, desired wall slope, and easy to use process. This paper will describe the optimization of key production processes involved in building polyimide dielectric layers with PI-2734 for a multichip module used in a telecommunications application. These studies have led to a repeatable, manufacturable, low cost solution to the construction of polyimide layers using MCMM-D technology. In English 5 Refs EI94031224102 3. New photodefinable polyimide with improved mechanical, lithographic, and processing properties Nader, Allan E. (DuPont Electronics) Lazaridis, Christina N. | Flattery, David K. Source: Proceedings/Abstracts - International Conference on Polyimides n 4TH Oct-Nov 1991 Publ by Soc of Plastics Engineers 3p Abstract: Two major types of photodefinable polyimide (PD) systems in common use today employ photo-crosslinkable ester or salt containing functions. The ester PDs generally exhibit excellent lithographic and processing behavior but limited mechanical properties. Conversely, the ionic-salt type PDs have good mechanical properties but marginal lithographic and processing properties. An effort to incorporate the desirable features of both PD types has resulted in a new photosensitive polyimide system, PD-4. PD-4 possesses the key goal properties necessary for advanced microelectronic designs. In English EI92060513569 4. Single mask wafer overcoat process using photodefinable polyimide Hall, Stephen (LSI Logic) Schuckert, Craig C. Source: Solid State Technology 42 10 1999 PennWell Publ Co p 95-96 0038-111X Abstract: In semiconductor fabrication, a polymeric stress buffer layer between the IC final passivation layer and plastic molding compound interface is often required to protect the delicate layers of oxide and circuitry on the silicon surface from the stresses induced by the molding compound during operation of the chip. The stress buffer or overcoat is applied and patterned as the last step in traditional wafer fabrication. The coating also affords protection to the wafer during subsequent backgrinding and dicing assembly processes, which can be rigorous - and expensive if wafer damage occurs. In English 5. Effect of polymer architecture on the photosensitivity of various polyimides Jurek, M.J. (OCG Microelectronic Materials Inc) Source: Proceedings/Abstracts - International Conference on Polyimides n 4TH Oct-Nov 1991 Publ by Soc of Plastics Engineers 1p Abstract: Investigators have shown that polymers prepared from monomers containing a benzophenone carbonyl group and benzylic protons undergo a photo-crosslinking event when exposed to ultraviolet radiation. This technology is useful in lithography where preferential crosslinking can be exploited to produce photodefinable images. A commercial polyimide, Probimide 400, was used as the control for this work. Initially, we investigated the preparation of large, monomeric blocks containing both of the two moieties necessary for photosensitivity (benzophenone carbonyl and benzylic protons). These monomers were then incorporated into a non-photosensitive polyimide at a 30 mole percent level and exposed to UV radiation. A randomly prepared polyimide containing the same molar quantities of the four monomers was also prepared and irradiated. A second approach was to investigate the effect of isolating the two groups by inserting a non-photoactive monomer unit (diamino phenylindane) between them. Finally, two non-photosensitive polyimides were synthesized, each containing one of the two photosensitive components, and the polymers were blended. All materials tested exhibited some degree of photosensitivity. In English 3 Refs EI92060513639 6. Micro-ATR-IR as a probe of BCB layers for MCM-D/L applications Mohler, C.E. (The Dow Chemical Company) Strandjord, A.J.G. | Castillo, D.W. | Stachowiak, M.R. | Heistand, R.H. | Garrou, P.E. | Tessier, T.G. Source: Materials Research Society Symposium Proceedings v 323 Nov 29-Dec 3 1993 1994 Publ by Materials Research Society p 295-300 0272-9172 Abstract: In this paper, the capability of attenuated reflection IR microscopy (micro-ATR-IR) to probe thin films of BCB polymers is demonstrated. This technique enables the polymer layer to be probed regardless of the characteristics of the substrate. Cure levels of both CycloteneTM 3022 and photodefinable BCB polymer films are obtained with micro-ATR-IR on both silicon and laminate substrate. Micro-ATR-Ir is also used to probe a rapid thermal cure of CycloteneTM 3022 and photodefinable BCB layers on copper-clad polyimide laminate; these measurements cannot be made with transmission IR due to the high reflectivity of the substrate. In English 7 Refs. EI94081356021 7. Additive approach to multichip modules, using electroless metallization processes Kersten, Peter (Technische Univ Berlin) Schammler, Gisela K.H. | Reichi, Herbert Source: International Journal of Microcircuits and Electronic Packaging v 17 n 1 1st Qtr 1994 p 73-79 1063-1674 Abstract: The ever increasing complexity of modern integrated circuits requires high-performance electronic packaging systems. Multichip, modules (MCMs) with high wiring densities and low ε values of dielectric materials offer short signal propagation times and therefore high clock frequencies. To achieve wiring densities up to 500 cm per sq cm, conductor and via dimensions must be minimized to 10 μm in diameter. Two kinds of electrical vias are used in MCM technology - stacked and staggered types. The stacked via type offers better planarity and lower electrical and thermal resistance. In addition, the routing area on top of a filled stacked via can be used for an upper via and leads to optimal wiring densities. To meet these requirements for a planar system with filled electrical vias, a full additive process for MCMs was investigated using photodefinable polyimide as interdielectric layer and electroless metallization processes for via filling. The signal lines were realized using a PVD process or electroplating. A two-layer thin-film module was fabricated to demonstrate process feasibility. In English 9 Refs. EI94061311823 8. Development of a polyimide based calcium ion-sensor as an integral part of multi-electrolyte ISFET Liao, Eva (Microsensor Res Lab, Univ of Washington, Seattle, WA, USA) Aw, Chak-Yoon | Moinpour, Mansour | Cheung, Peter W. Source: Proceedings of the Annual Conference on Engineering in Medicine and Biology pt 2 Nov 1-4 1990 1990 Publ by IEEE p 492-493 0589-1019 Abstract: A novel polymide-based calcium ion-sensitive field effect transistor (ISFET) was fabricated using integrated-circuit technology and micromachining. Neutral carrier N,N,N prime ,N prime -tetracyclohexyl-3-oxapentanediamide (ETH 129) is used as an ionophore. The chemical response of this ISFET is 25.9 mV/pCa. The successful development of the ISFET using polyimide as a photodefinable material demonstrates the feasibility of applying a microelectronic process to ISFETs with the inherent advantage of low cost due to the ability of batch fabrication. In English 6 Refs EI91100309145

수십마이크로미터 너비의 패턴은 비교적 쉽게 할 수 있을것 같습니다만 중요한 것을 너비가 아니라 두께입니다. 1-2마이크로미터 두께의 경우 쉽게 가능하나, 그 이상의 두께라면 좀더 어려운 기술이 필요합니다. 유형은 크게 posi형의 diazonaphthoquinone based PAC과 PI전구체를 혼합한 용액과 photoacid generator와 PI 전구체를 혼합한 용액 및 자체 감광성의 photo-x-linkable nega형과 자체 감광성 분해되는 posi형의 종류로 나눌수 있습니다. 유감스럽게도 posi기술은 국내에서는 1-2마이크로미터 두께의 경우 몇가지 의미있는 전진은 개발되었으나 10마이크로미터 두께의 경우 현재 몇 업체에서 개발을 착수하는 단계정도입니다. nega의 경우는 수십마이크로 미터의 너비라면 수십마이크로의 두께로도 패턴이 가능합니다 개인적으로 쪽지를 주시면 좀 더 상세한 안내를 해드리겠습니다.