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1.Describe the deposition mechanism which occurs in general CVD process 2.Describe how temperature affects the deposition rate. 3.Describe the differences between ALD and CVD processes in detail 4.Describe how the sol-gel process can be used to make thin films as well as nano-sized powders. 5.List various non-volatile memory devices. What are the main cahracteristics for each type of memory device?
  • ALD
  • CVD
  • MEMORY DEVICE
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    >1.Describe the deposition mechanism which occurs in general CVD process >2.Describe how temperature affects the deposition rate. >3.Describe the differences between ALD and CVD processes in detail >4.Describe how the sol-gel process can be used to make thin films as well as nano-sized powders. >5.List various non-volatile memory devices. What are the main cahracteristics for each type of memory device? 이런 숙제를 여기에 올리는것은 잘못됐다고 봅니다... ^^
    >1.Describe the deposition mechanism which occurs in general CVD process >2.Describe how temperature affects the deposition rate. >3.Describe the differences between ALD and CVD processes in detail >4.Describe how the sol-gel process can be used to make thin films as well as nano-sized powders. >5.List various non-volatile memory devices. What are the main cahracteristics for each type of memory device? 이런 숙제를 여기에 올리는것은 잘못됐다고 봅니다... ^^
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