KOSEN 한인과학기술자네트워크

Nano frame/Oxide material based devices are expected to provide a breakthrough in the electronics industry, which is focused on continuing miniaturization and ultra low power operation. In Particular, we have researched nanostructure devices which include Spintronic devices, Oxide thin film based devices, low-dimensional nanowires and Oxide transistor could overcome an origin limit of existing devices in next-generation applications. Spintroni devices. High spin polarization materials/New tunneling barrier materials. PMA multi-layer structures for nano-scale Spin Torque Transport: doping process. PMA single layer for Tunneling Magneto Resistance Junction. Novel multilayer architecture for low Jc/high Hc devices. Efficient spin injection/transport/detection using novel spin channels. Oxide material-based TFT for efficient channel. Co-sputtering and Sol gel fabrication process. Doping/ Annealing process. Oxygen ion or vacancy control for high efficient channel. Flexible substrate and Transparence, Low temperature growth. Novel functional materials and device for Nonvolatile memory applications. Nonvolatile ReRAM: Multi oxide layers. Selection device free resistive memory swithcing. New binary and metal -doped oxide materials. Oxide material based diode architecture. Nano oxide materials-based Energy harvesting and Lighting emitters. Efficient growth of ZnO nanorods using CVD techniques. Efficient energy harvesting using doped and low temperature process. n/p-type energy harvesting materials: Doping process. Polymer based piezoelectricity