The laboratory for opto-electronic materials (LOEM) is engaged in advanced research in opto-electronic materials, with a special accent on GaN-based group III nitride wide band gap compound semiconductors. Research projects include the fabrication of high-performance unprecedented opto-electronic devices such as UV-to-infrared full spectrum light emitting diodes (LEDs), visible-blind photodetectors (PDs), and tandem solar cells. Emphasis is made on the epitaxial growth and characterizations of band-gap-engineered semiconductor heterostructures, which give rise to novel opto-electronic properties.
Research in LOEM also includes the development of novel growth methods for epitaxial lateral overgrowth along with the fabrication of nanometer-scale semiconductor structures including quantum wells, quantum wires, and quantum dots. To successfully cope with this mission, LOEM employs metalorganic chemical vapor deposition (MOCVD) and sputtering system for the growth of the opto-electronic thin films, together with close collaboration of domestic industries and academia abroad for the fabrication of the opto-electronic devices. In order to solve the fundamental problems associated with the realization of these devices, efforts are made for material characterizations. The electrical, structural and optical properties of the grown thin films are mostly characterized by Hall measurement, x-ray diffractommetry (XRD), and photoluminescence (PL) spectroscopy.
Device innovation and design concepts are complemented by a strong effort in fundamental device physics, micro-fabrication and processing, and a solid platform of materials research, both crystal growth and characterization. The basic research directions outlined above are coupled with industrially important novel devices including blue/green/UV/white LEDs/LDs, visible-blind photodetectors, and flat panel displays.
This scientific research involves developing and understanding of the physics of semiconductor materials for novel applications and realizing advanced opto-electronic devices. In due accordance, this entails a multidisciplinary combination of solid state physics and materials science, as well as strong collaborative efforts between academia and industry. LOEM's charter is to make the place adventurer's workshop for future advanced opto-electronic devices and to transfer this technology to Korean industry.
#GaN #Light emitting diode #Localized surface plasmon #FRET
