In this work, We are studying various mechanisms for resistive switching phenomena, and establish a physical model that describes the resistive switching behavior.  And our goal is providing a solution to improvement of the memristor performance, and developing customized memristors for target application.

1) Resistive switching behavior may be classified based on the carriers involved in resistive switching behavior; ionic resistive switching and electronic resistive switching. To explain the ionic resistive switching behavior, the concept of the formation and rupture of conductive filament has been generally accepted. Thus, we are researching the filamentary switching mechanism, identifying the origin of conductive filament, and establishing a new physical model. Finally, under the comprehensive understanding of the filamentary switching mechanism and model, we are developing new technology for improving memristor performances. [1-12]

2) Another resistive switching mechanism is by charge trapping and detrapping, called electronic resistive switching. It has the advantage of high uniformity and low power consumption due to electrofoming-free device. We are studying physics and mechanism of carrier trapping and detrapping process, and, finally, establish a new model for charge trap memristor.  [13-17]

3) Memristor characteristics can be adjusted by not only memristive element itself but also another components, such as series and parallel resistors.(i.e. voltage divider) We believe that the realization of high uniform, self-limited, and multilevel switching properties are possible using peripheral elements. Therefore, our goal is finding adjustable series and parallel resistance for achieving high performance memristor. [18-21]