Silicon (Si) technology has been developed intensively for last a couple of decades and approached its theoretical limits of fundamental material nature. However, many utility applications of power electronics and wireless communication systems require high power density, high frequency, and high temperature operation that cannot be satisfied with the current Si technology. Wide bandgap semiconductors have received great attention due to their potential applications in high power and RF power systems; the unique physical and electrical properties, i.e. a wide bandgap, high breakdown field, and high saturation velocity, allow higher power densities than silicon or GaAs to be realized. It was true that commercialization of wide bandgap semiconductors had been limited by lack of production quality material. However, recent progress in wide bandgap semiconductor material growth has been impressive, expediting the commercialization of SiC and GaN products. Although the largest market identified for wide bandgap semiconductors is optoelectronics, such as light emitters, light emitting diodes (LEDs), lasers, and solid-state white lighting, the industrial market areas are expanding into high power control and distribution, high power RF applications, and harsh environment electronics.
Our research topics include, but are not limited to, design, processing, and characterization of GaN/SiC high power energy conversion devices, high frequency high power devices, UV photodiodes and electrochemical sensors, etc. We are also expertized in electrical, optical, and thermal simulations. Device processing is carried out at ISRC at Seoul National University by our team.
