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전기차 응용을 위한 수직형 GaN 전력반도체 기술 동향

2023-03-31 org.kosen.entty.User@79c1f146 코센2022(kosen2022)

분야

건설/교통

발행기관

한국전자통신연구원

발행일

2023.02.01

URL

https://ettrends.etri.re.kr/ettrends/200/0905200005/

첨부파일

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

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