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지식나눔

지식나눔

RBS(Rutherford backscattering spectrometry)에 대해서 알려주세요/

2005-12-30 org.kosen.entty.User@354b3f2a 함선영(whsy3542)
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RBS에 대해서 알려주세요. RBS로 얻을 수 있는 자료가 뭐가 있을까요?
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    한혁님의 답변

    2005-12-31
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    >RBS에 대해서 알려주세요. >RBS로 얻을 수 있는 자료가 뭐가 있을까요? > RBS is one of the ion beam characterization. Usually use He ions with 2-3 MeV energy which are impinges perpenducularly on a sample and then these are scattered by the sample atoms. These scattered particles undergo large changes in energy and direction due to kinematics.Some of the backscattered particles impinge on the detector, where they generate an electrical signal. This signal is amplified and processed. For example, the incoming ping pong ball loses the energy differently when it is scattered from blowling ball, base ball tennis ball and golf ball. Where ping pong ball is He ions and 4 different balls are different sample atoms. We can usually determine thickness, composition of thin film. In addition, we can measure amount and depth distribution of lattice disorder, location of impurity atoms in the lattice sites, and composition and thickness of amorphous surface layer by channeling effect.
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    >RBS에 대해서 알려주세요. >RBS로 얻을 수 있는 자료가 뭐가 있을까요? > RBS is one of the ion beam characterization. Usually use He ions with 2-3 MeV energy which are impinges perpenducularly on a sample and then these are scattered by the sample atoms. These scattered particles undergo large changes in energy and direction due to kinematics.Some of the backscattered particles impinge on the detector, where they generate an electrical signal. This signal is amplified and processed. For example, the incoming ping pong ball loses the energy differently when it is scattered from blowling ball, base ball tennis ball and golf ball. Where ping pong ball is He ions and 4 different balls are different sample atoms. We can usually determine thickness, composition of thin film. In addition, we can measure amount and depth distribution of lattice disorder, location of impurity atoms in the lattice sites, and composition and thickness of amorphous surface layer by channeling effect.
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